E. Takada, S. Saito, F. Sakamoto, S. Suzuki, Y. Shibata, T. Yoneda, A. Minoda, H. Tenzo, N. Iwata, I. Nakamura, K. Yajima, K. T. Nakahira,
"Development and improvement of human resource development in nuclear engineering for national college students in Japan", Procedia Computer Science, 159 (2019) 2580-2588
T. Yoneda, J. Horikawa, S. Saijo, M. Arakawa, Y. Yamamoto, Y. Yamamoto, "Stopping power for 4.8–6.8 MeV C ions along [1 1 0] and [1 1 1]
directions in Si", Nucl. Instr. Meth. B, 425 (2018), p.1
S.Tawara, Y. Yamamoto, M. Arakawa, S. Saijo, J. Horikawa, T.Yoneda, "Universal Expression of Projected Range Distributions for Spherical and
Cylindrical Shape Target by Computer Simulation", J. Vac. Soc. Jpn., 60 (2017) 463-466
T. Yoneda, M. Shibuya, K. Mitsuhara, A. Visikovskiy, Y. Hoshino, Y. Kido, "Graphene on SiC(0001) and SiC(000-1) surfaces grown via
Ni-silicidation reactions", Surface Science, 604 (2010) 1509-1515
T. Yoneda, "Depth distribution of phosphorus implanted intno SiO2 analyzed by the Monte Carlo Simulation of Extended TRIM", J. Vac. Soc. Jpn,
52 (2009) p124-126
Y. Hoshino, T. Nishimura, T. Yoneda, K. Ogawa, H. Namba, Y. Kido, "Initial oxidation of 6H-SiC(0001)- surface studied by ion scattering
combined with photoemission induced by synchrotron-radiation- light", Surface Science, Vol. 505 (2002) pp. 234-242
T. Hatayama, T. Yoneda, T. Nakata, M. Watanabe, T. Kimoto, H. Matsunami, "Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky
Rectifiers ", Jpn. J. Appl. Phys. Vol.39 (2000) L1216-L1218
K. Hanamoto, M. Sasaki, T. Yoneda, K. Miyatani, H. Miki, C. Kaito, Y. Nakayama, "Electrical and optical properties of carbon implanted In2O3
thin film", Nucl. Instrum. Methods B, 168 (2000) 389-94
T. Yoneda, T. Nakata, M. Watanabe, M. Kitabatake, "Characterization of an enhanced thermal oxide layer on 6H-SiC using ion irradiation",
Mater. Science and Engineering B61-62 p502-504 (1999)
Y. Yamamoto, A. Ikeda, T. Yoneda, K. Kajiyama, Y. Kido, "Impact-parameter dependent stopping power for MeV He ions in Si Crystals", Nucl.
Instrum. Methods B, 153 (1999) 10-14
K. Kajiyama, T. Yoneda, K. Sekine, T. Shibauch, M. Yamamoto, "Ion implantation into silica fibers and metal wires", Proc. of XIIth Int. Conf.
Ion Implantation Technology, Vol.2 (1999) 982-985
T. Yoneda, T, Nakata, M. Kitabatake, Y. Kido, "Dose Dependence of the Enhancement of Thermal Oxidation for 6H-SiC by 30 keV 18O+ and 20Ne+
Irradiation", Jpn. J. Appl. Phys., Vol.37 (1998) 6262-6265
T. Hara, Y. Kakizaki, T. Tanaka, M. Inoue, K. Kajiyama, T. Yoneda, K. Sekine, K. Masao, "Delamination of Thin Layer in H+ Implanted Silicon
Carbide", Proc. of 7th Int. Conf. Silicon Carbide, III-Nitrides and Related Materials (Trans Tech Publications, Switzerland, 1998). p771-774
T. Yoneda, K. Kajiyama, F. Tohjou, Y. Yoshioka, A. Ikeda, Y. Kisaka, T. Nishimura, Y. Kido, "Kinetics and Depth Distributions of Oxygen
Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM", Jpn. J. Appl. Phys., Vol.36 (1997) 7323-7328
K. Kajiyama, T. Yoneda, Y. Fujioka, Y. Kido, "Si-O bond formation by oxygen implantation into silicon", Nucl. Instrum. Methods B,
121(1997)315-318
T. Hara, Y. Kakizaki, T. Kihara, S. Oshima, T. Kitamura, K. Kajiyama, T. Yoneda, K. Sekine, M. Inoue, "Ion Implantation and annealing
conditions for delamination of Si layer by hydrogen ion implantation", J. Electrochem. Soc., 144(1997)L78-81
T. Hara, Y. Kakizaki, T. Tanaka, M. Inoue, K. Kajiyama, T. Yoneda, K. Sekine, K. Masao, "Measurement of the Delamination of Thin Silicon and
Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer", Jpn. J. Appl. Phys., 36(1997)L1142-1145
M. Ishimaru, S. Harada, T. Motooka, T. Nakata, T. Yoneda, M. Inoue, "Amorphization and solid phase epitaxy of high-energy ion imptated
6H-SiC", Nuclear Instruments and Methods in Physics Research B, 127/128(1997)195-197
T. Hara, T. Onada, Y. Kakizaki, S. Oshima, T. Kitamura, K. Kajiyama, T. Yoneda, K. Sekine, M. Inoue, "Delimination of Thin Layers by High
Dosse Hydrogen Ion Impalnteation in Silicon", J. Electrochem. Soc., 143(1996)L166-168
S. Harada, M. Ishimaru, T. Motooka, T. Nakata, T. Yoneda, M. Inoue, "Recrystallization of MeV Si imptated 6H-SiC", Appl. Phys. Lett.,
69(1996)3534-3536
T. Hara, Y. Kakizaki, S. Oshima, T. Kihara, T. Kitamura, K. Kajiyama, T. Yoneda, M. Inoue, "H+ Implantation in Si for Void Cut SOI
Manufacturing", Proceedings of 11th International Conference on Ion Implantation Technology, Austin, TX, Volume 1, Issue 1, June 16-21, 1996, P45-48
S.Tawara, T.Yoneda, "Characterization of ion-implanted into silica powders, silica fiber and metal wire analyzed by the Monte Carlo simulation of extended TRIM", EM-NANO 2015, Niigaata, June,
16-19, P2-52, 2015
T. Yoneda, Y. Yamamoto, "Stopping Power for 5.2-6.8 MeV C ions into Si [110] direction", 25th International Conference on Atomic Collisions in Solids, Kyoto, October 21-25, 2012
T. Yoneda, Y. Yamamoto, T. Sato, M. Arakawa, T. Kawarabayashi, "Creative Manufacturing Education for freshman by making Electroniccircuits", Proceedings of The International Symposium on
Advances in Technology Education (ISATE) 2012, Kita-Kyushu, 2012, p-080